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hexfet power mosfet notes through are on page 9 features and benefits applications ? secondary side synchronous rectification ? inverters for dc motors ? dc-dc brick applications ? boost converters pqfn 5x6 mm absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @ t c(bottom) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range v w a c max. 1447 300 20 7511 75 -55 to + 150 3.6 0.029 104 v ds 75 v r ds(on) max (@v gs = 10v) 8.5 m ? q g (typical) 48 nc r g (typical) 0.6 ? i d (@t c(bottom) = 25c) 75 a features benefits low rdson (< 8.5m ? ) lower conduction losses low thermal resistance to pcb (< 1.2c/w) enables better thermal dissipation low profile (<0.9 mm) results in increased power density industry-standard pinout ? multi-vendor compatibility compatible with existin g surface mount techniques easier manufacturing rohs compliant containin g no lead, no bromide and no halo g en environmentally friendlier msl1, industrial qualification increased reliability

! note form quantity IRFH7107trpbf pqfn 5mm x 6mm tape and reel 4000 IRFH7107tr2pbf pqfn 5mm x 6mm tape and reel 400 eol notice #259 orderable part number package type standard pack downloaded from: http:///

! s d g thermal resistance parameter typ. max. units r jc (bottom) junction-to-case CCC 1.2 r jc (top) junction-to-case CCC 30 c/w r ja junction-to-ambient CCC 35 r ja (<10s) junction-to-ambient CCC 22 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 75 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 0.09 CCC v/c r ds(on) static drain-to-source on-resistance CCC 6.9 8.5 m ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v ? v gs(th) gate threshold voltage coefficient CCC -8.7 CCC mv/c i dss drain-to-source leakage current CCC CCC 20 CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 68 CCC CCC s q g total gate charge CCC 48 72 q gs1 pre-vth gate-to-source charge CCC 10 CCC q gs2 post-vth gate-to-source charge CCC 4.0 CCC q gd gate-to-drain charge CCC 15 CCC q godr gate charge overdrive CCC 19 CCC q sw switch char g e (q gs2 + q gd ) CCC 19 CCC q oss output charge CCC 19 CCC nc r g gate resistance CCC 0.6 CCC ? t d(on) turn-on delay time CCC 9.1 CCC t r rise time CCC 12 CCC t d(off) turn-off delay time CCC 20 CCC t f fall time CCC 6.5 CCC c iss input capacitance CCC 3110 CCC c oss output capacitance CCC 365 CCC c rss reverse transfer capacitance CCC 165 CCC avalanche characteristics parameter units e as sin g le pulse avalanche ener g y mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 28 42 ns q rr reverse recovery charge CCC 160 240 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = 100a v gs = 10v typ. v ds = 75v, v gs = 0v v ds = 16v, v gs = 0v v dd = 38v, v gs = 10v CCC r g =1.8 ? v ds = 25v, i d = 45a v ds = 75v, v gs = 0v, t j = 125c a i d = 45a i d = 45a v gs = 0v v ds = 25v t j = 25c, i f = 45a, v dd = 38v di/dt = 500a/s t j = 25c, i s = 45a, v gs = 0v showing the integral reverse p-n junction diode. conditions max. 106 45 ? = 1.0mhz conditions v gs = 0v, i d = 250ua reference to 25c, i d = 1.0ma v gs = 10v, i d = 45a CCC CCC 300 CCC CCC 75 mosfet symbol na ns a pf nc v ds = 38v CCC v gs = 20v v gs = -20v downloaded from: http:///
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! fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 7.0v 5.5v 4.8v 4.5v 4.3v bottom 4.0v 60s pulse width tj = 25c 4.0v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.0v 60s pulse width tj = 150c vgs top 15v 10v 7.0v 5.5v 4.8v 4.5v 4.3v bottom 4.0v 2 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 25v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 45a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 10203040506070 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 60v v ds = 38v vds= 15v i d = 45a downloaded from: http:///

! fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 60 70 80 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100a i d = 250a i d = 1.0ma i d = 1.0a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100sec 1msec 10msec dc downloaded from: http:///
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! fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 4 6 8 10 12 14 16 18 20 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 45a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.9a 12a bottom 45a downloaded from: http:///
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! fig 16.
for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr

? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
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! pqfn 5x6 outline "e" package details !
" # # pqfn 5x6 outline "e" part marking xxxx xywwx xxxxx international rectifier logo part number (4 or 5 digits) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) !"#$ %& ' &(())) ('# ( (# $% * '+ !"#,& ' &(())) ('# ( (# , downloaded from: http:///
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! pqfn 5x6 outline "e" tape and reel reel dimensions note: controlling dimensions in mm std reel quantity is 4000 parts. standard option (qty 4000) min 329.5 20.9 12.8 1.7 97 ref 13 code a b c d e f g max 330.5 21.5 13.5 2.3 99 17.4 14.5 min 12.972 0.823 0.504 0.067 3.819 0.512 max 13.011 0.846 0.532 0.091 3.898 0.571 metric imperial tr1 option (qty 400) imperial min 6.988 0.823 0.520 0.075 2.350 0.512 max 178.5 21.5 13.8 2.3 66 12 14.5 min 177.5 20.9 13.2 1.9 65 ref13 metric max 7.028 0.846 0.543 0.091 2.598 0.571 downloaded from: http:///
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! qualification standards can be found at international rectifiers web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.11mh, r g = 50 ? , i as = 45a. pulse width 400s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level indus trial ?? (per je de c je s d47f ??? guidelines ) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comment 1/20/2014 ? u p dated orderin g information to reflect the end-of-life ( eol ) of the mini-reel o p tion ( eol notice #259 ) . ? updated data sheet with the new ir corporate template. downloaded from: http:///

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